• Part: NCE6005AR
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 316.23 KB
Download NCE6005AR Datasheet PDF
NCE Power Semiconductor
NCE6005AR
Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply SOT-223-3L view Package Marking and Ordering Information Device Marking NCE6005AR Device NCE6005AR Device Package SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain...