NCE6007S Datasheet PDF (N-Channel Enhancement Mode Power MOSFET) | Download NCE Power Semiconductor NCE6007S

NCE6007S - N-Channel Enhancement Mode Power MOSFET

Description

The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

Datasheet Details

Part number	NCE6007S
Manufacturer	NCE Power Semiconductor
File Size	412.44 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6007S Datasheet
Additional preview pages of the NCE6007S datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE6007S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.

Published: Jun 2, 2018 |