• Part: NCE6020I
  • Description: NCE N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power
  • Size: 448.76 KB
Download NCE6020I Datasheet PDF
NCE Power
NCE6020I
Description The NCE6020I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Genera Features - VDS =60V,ID =20A RDS(ON) <44mΩ @ VGS=10V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous...