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NCE6005S - N-Channel Enhancement Mode Power MOSFET

Description

The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses.

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Datasheet preview – NCE6005S

Datasheet Details

Part number NCE6005S
Manufacturer NCE Power
File Size 374.07 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6005S Datasheet
Additional preview pages of the NCE6005S datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE6005S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =4.
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