• Part: NCE6005S
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power
  • Size: 374.07 KB
Download NCE6005S Datasheet PDF
NCE Power
NCE6005S
Description The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power...