• Part: NCE6008AS
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power
  • Size: 390.12 KB
Download NCE6008AS Datasheet PDF
NCE Power
NCE6008AS
Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Schematic diagram Application - Power switching application - Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package SOP-8 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage...