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NCE60H10A - N-Channel Enhancement Mode Power MOSFET

Description

The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

  • VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Special designed for convertors and power controls.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram Marking and pin assignment.

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Datasheet preview – NCE60H10A

Datasheet Details

Part number NCE60H10A
Manufacturer NCE Power Semiconductor
File Size 346.35 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60H10A Datasheet
Additional preview pages of the NCE60H10A datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE60H10A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.
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