NCE6080A Datasheet PDF (N-Channel Enhancement Mode Power MOSFET) | Download NCE Power Semiconductor NCE6080A

NCE6080A - N-Channel Enhancement Mode Power MOSFET

Description

The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

Datasheet Details

Part number	NCE6080A
Manufacturer	NCE Power Semiconductor
File Size	398.33 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6080A Datasheet
Additional preview pages of the NCE6080A datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE6080A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.

Published: Jun 2, 2018 |