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PD -94915A
IRG4IBC20FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Very Low 1.66V votage drop
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
G
kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
• Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM
outline
• Lead-Free
Fast CoPack IGBT
VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.
IRG4IBC20FDPBF Datasheet
