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IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
  • IGBT co-packaged with.

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Datasheet preview – IRG4BC20KD

Datasheet Details

Part number IRG4BC20KD
Manufacturer IRF
File Size 199.07 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC20KD Datasheet
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Full PDF Text Transcription

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PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.
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