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IRG4BC20MDPbF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Rugged: 10µsec short circuit capable at VGS=15V.
  • Low VCE(on) for 4 to 10kHz.

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Full PDF Text Transcription

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PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free G C Fast IGBT VCES = 600V VCE(on) typ. = 1.
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