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IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR

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Part number IRG4BC20KD-S
Manufacturer IRF
File Size 222.97 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
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PD -91598A IRG4BC20KD-S Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Short Circuit Rated UltraFast IGBT VCES = 600V • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible. •HEXFREDTM diodes optimized for performance with IGBTs.
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