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IRG4BC20MD-S - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Rugged: 10µsec short circuit capable at VGS=15V.
  • Low VCE(on) for 4 to 10kHz.

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Datasheet preview – IRG4BC20MD-S

Datasheet Details

Part number IRG4BC20MD-S
Manufacturer IRF
File Size 200.73 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC20MD-S Datasheet
Additional preview pages of the IRG4BC20MD-S datasheet.

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Full PDF Text Transcription

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PD -94116 IRG4BC20MD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.
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