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IRG4BC20MD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Rugged: 10µsec short circuit capable at VGS=15V.
  • Low VCE(on) for 4 to 10kHz.

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www.DataSheet4U.com PD -95564 IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package • Lead-Free C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.
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