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PD -94907
IRG4BC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free
C
G E
n-channel
Benefits
Latest generation 4 IGBTs offer highest power density controls possible HEXFREDTM diodes optimized for performance with IGBTs.
IRG4BC20KDPBF Datasheet
