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IRG4IBC20KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • C Short Circuit Rated UltraFast IGBT VCES = 600V.
  • High switching speed optimized for up to 25kHz with low VCE(on).
  • Short Circuit Rating 10µs @ 125°C, VGE = 15V.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
  • IGBT co-packaged with.

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www.DataSheet4U.com PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 FULLPAK • Lead-Free G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 6.
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