Datasheet4U Logo Datasheet4U.com

IRG4IBC20W - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4IBC20WPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20FDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Full PDF Text Transcription

Click to expand full text
PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.5kV, 60s insulation voltage V • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Industry standard Isolated TO-220 FullpakTM outline C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.
Published: |