Click to expand full text
www.DataSheet4U.com
PD -95636
IRG4IBC20WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.5kV, 60s insulation voltage Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Industry standard Isolated TO-220 FullpakTM outline Lead-Free
C
VCES = 600V
G E
VCE(on) typ. = 2.16V
@VGE = 15V, IC = 6.
IRG4IBC20WPBF Datasheet
