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PD -91752A
IRG4IBC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.