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IRG4IBC30FD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

  • Very Low 1.59V votage drop 2.5kV, 60s insulation voltage … 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • IGBT co-packaged with.

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Full PDF Text Transcription

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PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1.59V votage drop 2.5kV, 60s insulation voltage … 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.
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