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IRG4IBC30KD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

  • High switching speed optimized for up to 25kHz with low VCE(on).
  • Short Circuit Rating 10µs @ 125°C, VGE = 15V.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
  • IGBT co-packaged with.

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Full PDF Text Transcription

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PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 FULLPAK C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 9.
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