Click to expand full text
PD -95597A
IRG4IBC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High switching speed optimized for up to 25kHz with low VCE(on)
Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations Industry standard TO-220 FULLPAK Lead-Free
C
G E
n-channel
Short Circuit Rated UltraFast IGBT
VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 9.
IRG4IBC30KDPBF Datasheet
