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IRG4IBC30UDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • 2.5kV, 60s insulation voltage ….
  • 4.8 mm creapage distance to heatsink.
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • IGBT co-packaged with.

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Full PDF Text Transcription

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PD- 95598A IRG4IBC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage … • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline • Lead-Free C G E n-channel VCES = 600V VCE(on) typ. = 1.
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