SSM3J56ACT Datasheet - Toshiba

SSM3J56ACT, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS SSM3J56ACT 1.

Features

* (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Assignment CST3 SSM3J56ACT 1:

SSM3J56ACT-Toshiba.pdf