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SSM3J130TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J130TU
○ Power Management Switch Applications
• 1.5 V drive • Low ON-resistance:RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 25.8 mΩ (max) (@VGS = -4.5 V)
Unit: mm
2.1±0.1 1.7±0.1
0.3-+00..015
2.0±0.1 0.65±0.05
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-4.4 A
-8.8
Power dissipation
PD (Note 1)
800
mW
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM3J130TU Datasheet
