SSM3J130TU Datasheet - Toshiba

SSM3J130TU, Silicon P-Channel MOSFET

SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J130TU ○ Power Management Switch

Applications

* 1.5 V drive
* Low ON-resistance:RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 25.8 mΩ (max) (@VGS = -4.5 V) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum R

SSM3J130TU_Toshiba.pdf