SSM3J01T Datasheet - Toshiba Semiconductor

SSM3J01T, TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching

Applications

* Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS =
* 4 V) : Ron = 0.6 Ω (max) (@VGS =
* 2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID I

SSM3J01T_ToshibaSemiconductor.pdf