SSM3J01F Datasheet - Toshiba Semiconductor

SSM3J01F, Silicon P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F SSM3J01F High Speed Switching

Applications

* Unit: mm
* Small package
* Low on resistance : Ron = 0.4 Ω (max) (VGS =
* 4 V) : Ron = 0.6 Ω (max) (VGS =
* 2.5 V)
* Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source volt

SSM3J01F_ToshibaSemiconductor.pdf