SSM3J02F Datasheet - Toshiba Semiconductor

SSM3J02F, TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch High Speed Switching

Applications

* Small package Low on resistance : Ron = 0.5 Ω (max) (@VGS =
* 4 V) : Ron = 0.7 Ω (max) (@VGS =
* 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipa

SSM3J02F_ToshibaSemiconductor.pdf