SSM3J135TU Datasheet - Toshiba

SSM3J135TU, Silicon P-Channel MOSFET

SSM3J135TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J135TU ○ Power Management Switch

Applications

* 1.5 V drive
* Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-S

SSM3J135TU_Toshiba.pdf