SSM3J112TU Datasheet - Toshiba Semiconductor

SSM3J112TU, Silicon P-Channel MOSFET

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching

Applications

* 4V drive
* Low on-resistance: Ron = 790mΩ (max) (@VGS =
* 4 V) Ron = 390mΩ (max) (@VGS =
* 10 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Characteristic Symbol Rating Unit Drain-Source voltage Ga

SSM3J112TU_ToshibaSemiconductor.pdf