SSM3J110TU Datasheet - Toshiba Semiconductor

SSM3J110TU, Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J110TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching

Applications

* 1.8V drive Low on-resistance: Ron = 240mΩ (max) (@VGS =
* 1.8 V) Ron = 145mΩ (max) (@VGS =
* 2.5 V) Ron = 94mΩ (max) (@VGS =
* 4.0 V) 0.65±0.05 2.0±0.1 1 2 3 0.166±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteris

SSM3J110TU_ToshibaSemiconductor.pdf