SSM3J115TU Datasheet - Toshiba Semiconductor

SSM3J115TU, Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J115TU www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching

Features

* o liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01

Applications

* Power Management Switch Applications
* 1.5 V drive Low ON-resistance: Ron = 353 mΩ (max) (@VGS =
* 1.5 V) Ron = 193 mΩ (max) (@VGS =
* 1.8 V) Ron = 125 mΩ (max) (@VGS =
* 2.5 V) Ron = 98 mΩ (max) (@VGS =
* 4.0 V) 2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.

SSM3J115TU_ToshibaSemiconductor.pdf