SSM3J114TU Datasheet - Toshiba Semiconductor

SSM3J114TU, Silicon P-Channel MOSFET

SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU ○ High-Speed Switching

Applications

* ○ Power Management Switch Applications Unit: mm 0.3-+00..015
* 1.5 V drive
* Low on-resistance Ron = 526 mΩ (max) (@ VGS = -1.5 V) Ron = 321 mΩ (max) (@ VGS = -1.8 V) Ron = 199 mΩ (max) (@ VGS = -2.5 V) Ron = 149 mΩ (max) (@ VGS = -4.0 V) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 1 2

SSM3J114TU_ToshibaSemiconductor.pdf