SSM3J113TU Datasheet - Toshiba Semiconductor

SSM3J113TU, Silicon P-Channel MOSFET

SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching

Applications

* 2.0V drive
* Low on-resistance: Ron = 449mΩ (max) (@VGS =
* 2.0 V) Ron = 249mΩ (max) (@VGS =
* 2.5 V) Ron = 169mΩ (max) (@VGS =
* 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain c

SSM3J113TU_ToshibaSemiconductor.pdf