SSM3J111TU Datasheet - Toshiba Semiconductor

SSM3J111TU, Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J111TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching

Applications

* 2.5V drive Low on-resistance: Ron = 480mΩ (max) (@VGS =
* 4 V) 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Unit: mm Ron = 680mΩ (max) (@VGS =
* 2.5 V) 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage D

SSM3J111TU_ToshibaSemiconductor.pdf