SSM3J13T Datasheet - Toshiba Semiconductor

SSM3J13T, TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching

Applications

* Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS =
* 4 V) : Ron = 95 mΩ (max) (@VGS =
* 2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID

SSM3J13T_ToshibaSemiconductor.pdf