SSM3J108TU Datasheet - Toshiba Semiconductor

SSM3J108TU, Field Effect Transistor Silicon P-Channel MOS Type

SSM3J108TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching

Applications

* 1.8V drive Low on-resistance: Ron = 363mΩ (max) (@VGS =
* 1.8 V) Ron = 230mΩ (max) (@VGS =
* 2.5 V) Ron = 158mΩ (max) (@VGS =
* 4.0 V) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic

SSM3J108TU_ToshibaSemiconductor.pdf