SSM3J02T Datasheet - Toshiba Semiconductor

SSM3J02T, TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch High Speed Switching

Applications

* Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 Ω (max) (@VGS =
* 4 V) : Ron = 0.7 Ω (max) (@VGS =
* 2.5 V) Low-voltage operation possible Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage

SSM3J02T_ToshibaSemiconductor.pdf