SSM3J05FU Datasheet - Toshiba Semiconductor

SSM3J05FU, Power Management Switch High Speed Switching Applications

SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching

Applications

* Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS =
* 4 V) : Ron = 4.0 Ω (max) (@VGS =
* 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID

SSM3J05FU_ToshibaSemiconductor.pdf