SSM3J118TU Datasheet - Toshiba Semiconductor

SSM3J118TU, Silicon P-Channel MOSFET

SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching

Applications

* 4 V drive
* Low ON-resistance: Ron = 480 mΩ (max) (@VGS =
* 4 V) Ron = 240 mΩ (max) (@VGS =
* 10 V) Absolute Maximum Ratings (Ta = 25°C) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Characteristic Symbol Rating Unit Drain
* so

SSM3J118TU_ToshibaSemiconductor.pdf