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GT40Q323 Datasheet - Toshiba Semiconductor

GT40Q323 Silicon N-Channel IGBT

GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application www.datasheet4u.com Unit: mm Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generation TO-3P (N) (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Puls.

GT40Q323 Datasheet (184.75 KB)

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Datasheet Details

Part number:

GT40Q323

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

184.75 KB

Description:

Silicon n-channel igbt.

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GT40Q323 Silicon N-Channel IGBT Toshiba Semiconductor

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