Datasheet Details
Part number:
GT40Q322
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
116.90 KB
Description:
Silicon n-channel igbt.
GT40Q322_ToshibaSemiconductor.pdf
GT40Q322_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT40Q322
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
116.90 KB
Description:
Silicon n-channel igbt.
GT40Q322, Silicon N-Channel IGBT
GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance Inverter Switching Application Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector curren
📁 Related Datasheet
📌 All Tags