Datasheet Details
Part number:
GT40J322
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
333.22 KB
Description:
Silicon n-channel igbt.
GT40J322-ToshibaSemiconductor.pdf
GT40J322-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT40J322
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
333.22 KB
Description:
Silicon n-channel igbt.
GT40J322, Silicon N-Channel IGBT
GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage DC Collector curr
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