Datasheet Details
Part number:
GT40J321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
366.84 KB
Description:
Silicon n-channel igbt.
GT40J321-ToshibaSemiconductor.pdf
GT40J321-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT40J321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
366.84 KB
Description:
Silicon n-channel igbt.
GT40J321, Silicon N-Channel IGBT
GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCE
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