Datasheet Details
Part number:
GT40M101
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
225.97 KB
Description:
Silicon n-channel igbt.
GT40M101_ToshibaSemiconductor.pdf
GT40M101_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT40M101
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
225.97 KB
Description:
Silicon n-channel igbt.
GT40M101, SILICON N-CHANNEL IGBT
GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement Mode : tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque D
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