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GT400P10T - P-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -100V -35A < 35mΩ < 40mΩ Schematic diagram.

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Datasheet Details

Part number GT400P10T
Manufacturer GOFORD
File Size 927.05 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT400P10T Datasheet

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Full PDF Text Transcription

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GT400P10T P-Channel Enhancement Mode Power MOSFET Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.
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