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PBSS2515VS - NPN Transistor

NXP

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Datasheet Details

Part number	PBSS2515VS
Manufacturer	NXP
File Size	78.60 KB
Description	NPN Transistor
Datasheet	PBSS2515VS_PhilipsSemiconductors.pdf

PBSS2515VS Product details

Description

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX.

Features

300 mW total power dissipation.
Very small 1.6 x 1.2 mm ultra thin package.
Excellent coplanarity due to straight leads.
Low collector-emitter saturation voltage.
High current capability.
Improved thermal behaviour due to flat lead.
Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area.
Reduces required PCB area.
Reduced pick and place costs.

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Published: Mar 22, 2005 |