Download PBSS2540F Datasheet PDF
NXP Semiconductors
PBSS2540F
FEATURES - Low collector-emitter saturation voltage - High current capability - Improved thermal behaviour due to flat leads - Enhanced performance over SOT23 general purpose transistors. APPLICATIONS - General purpose switching and muting - Low frequency driver circuits - Audio frequency general purpose amplifier applications - Battery driven equipment (mobile phones, video cameras, hand-held devices). DESCRIPTION handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V m A A mΩ 3 3 1 2 MAM410 NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP plement: PBSS3540F. 1 2 MARKING TYPE NUMBER PBSS2540F MARKING CODE 2C Fig.1 Top view Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL...