Download PBSS2540M Datasheet PDF
NXP Semiconductors
PBSS2540M
FEATURES - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High efficiency leading to reduced heat generation - Reduced printed-circuit board requirements. APPLICATIONS - Power management: - DC-DC converter - Supply line switching - Battery charger - LCD backlighting. - Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load drivers (e.g. relays, buzzers and motors). handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V m A A mΩ 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP plement: PBSS3540M. MARKING TYPE NUMBER PBSS2540M MARKING CODE DC 1 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. 2003 Jul 22 Data...