PBSS2515VS
description
NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP plement: PBSS3515VS
2. Features and benefits
- 300 m W total power dissipation
- Very small 1.6 x 1.2 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector-emitter saturation voltage
- High current capability
- Improved thermal behavior due to flat lead
- Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs
3. Applications
- General purpose switching and muting
- Low frequency driver circuits
- Audio frequency general purpose amplifier applications
- Battery driven equipment (mobile phones, video cameras and hand-held devices)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO collector-emitter voltage
IC collector current h FE
DC current gain
Conditions open base VCE = 2 V; IC = 10 m A; Tamb =...
