PBSS2515YPN
description
NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. .
2. Features and benefits
- Low collector-emitter saturation voltage
- High current capability
- Replaces two SC-70 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs.
3. Applications
- General purpose switching and muting
- Low frequency driver circuits
- LCD backlighting
- Supply line switching circuits
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base
- -
ICM TR1 (NPN) peak collector current single pulse; tp ≤ 1 ms
- -
RCEsat TR2 (PNP) collector-emitter
IC = 500 m A; IB = 50 m A; pulsed; tp ≤ saturation resistance...
